Perkin-Elmer 4480

The Delta Cathode Systems Perkin-Elmer 4480

Perkin-Elmer 4480 is a delta target sputtering system of identical design to Model PE 4450 but including cassette-to-cassette loading as a standard feature.

The Perkin Elmer Delta cathode systems  4480 , are ideally suited to aluminum alloy deposition for gate contact and interconnect metalization.

Utilization and Rate

A Delta cathode system achieves an instantaneous deposition rate for aluminum alloys of 12,000 angstroms/minute. The substrate pallet can be in excess of 200 angstroms/kw minute with sputtered material utilization approaching.

Uniformity and throughput

Delta cathode systems maximize uniformity of deposition, exhibiting a +/-7% uniformity over a 6″ annular width. Optional high performance Delta cathodes yield a uniformity of +/-5% over a 7³/₄ inch band, allowing processing of up to 22 100mm wafers per cycle. Standard Delta cathodes process 50-60 100mm wafers per hour while optional high performance Delta cathodes yield throughput in excess of 80 100mm wafers per hour.

A particular advantage of a circular batch sputtering system is its adaptability to different substrate sizes. The Model 4480 and other delta cathode systems can easily handle substrate size up to 8 inches in diameter. Standard wafer size of 3 inch, 100mm, 125mm and 150mm can easily be accommodated.

Resistivity

Perkin Elmer sputtering systems ensure low film resistivity by minimizing partial pressure of oxygen and nitrogen below 1X10^-7 Torr. With total system background pressure of 5X10^-7 Torr and an instantaneous deposition rate in excess of 8500 angstroms/minute, near-bulk resistivity for aluminum alloy films can be achieved.

Film Hardness

By keeping oxygen content below, film hardness for typical 1 micron thick aluminum silicon films can be kept below 100 kg/mm² after annealing at 500^oC, minimizing bonding failures.

Specularity

High quality aluminum alloy films of 70-90% relative reflectance are routinely produced in high rate DC Delta magnetron systems, yielding wafers easily accommodated in today’s projection mask aligners.

Optional load lock pumping and wafer degassing further minimize water vapor and hydrogen, the principal contaminants that contribute to hillock growth and poor specularity. As metallization films become thicker and specularity degrades, further reduction of unwanted gases can be achieved through the use of supplemental hydrogen getter pumping in the Model 4480 and other Delta cathode systems.

Step Coverage

The high rate sputtering made possible with Perkin Elmer Delta DC magnetron cathodes produces sufficient heat to maintain film temperature in the ideal range. Heating the substrate in this manner and re-sputtering the deposited material through RF bias improves coverage of vertical surfaces in VLSI structures. It also minimizes cracks and cusping.

Optional High Performance Delta Cathodes

Provide more uniform deposition over a wider annular region of the pallet. A maximum of twenty two 100mm wafers can be loaded yielding 50% more throughput for a typical metallization process. The HIGH THROUGHPUT option consists of a modified shaping aperture, a high performance Delta cathode and a pallet nested for twenty two 100mm wafers. The region of high uniformity is extended across the total 8″ annular width of the pallet. A uniformity of +/-7% is achieved across a  7³/₄ inch band suitable for mounting two concentric rows of 100mm wafers. This wide brand of uniformity means that 5¹/₄“, 8″, or 14” recording discs can be accommodated in the system.

The Delta Cathode Dual Deposit Sputter Module

The Delta Cathode Dual Deposition Sputter Module, operable in either a dual DC mode or DC and RF mode, is designed for higher throughput and larger scale production. Separate power suppliers allow independent application of either DC or RF energy to two delta cathodes simultaneously. The dual deposit sputter module for Models 4410, 4450 and 4480 is the choice for co-sputtering of refractory metal silicides  for VLSI circuits. The dual deposit sputter modules and the co-sputtering technique allow the deposition of contamination-free films.

Features:

• High rate Delta DC magnetron
• High throughput operation
• Fully process characterized for aluminum alloys
• High uniformity
• DC, RF, Etch, and Bias operation
• Ultra clean vacuum system
• Load lock operation
• UHV design
• Flexible for development or production use
• Any size substrates up to 8″ diameter
• Various pumping and power options
• Optional system and process controllers
• Cassette to cassette operation(Model 4480)
• Co-sputter option for silicides
• Operation gas controller