Perkin-Elmer 4410

The Delta Cathode Systems Perkin-Elmer 4410

Perkin-Elmer 4410 is a delta target sputtering system designed for high rate deposition of metals and metal alloys. The 4410 is also adaptable to the deposition of dielectrics and employs up to three delta-shaped cathodes in DC magnetron, RF magnetron, or RF diode configuration. Power options are available up to 3 kw RF and 10 KW DC..

The Perkin Elmer Delta cathode systems  4410 , are ideally suited to aluminum alloy deposition for gate contact and interconnect metalization.

Utilization and Rate

A Delta cathode system achieves an instantaneous deposition rate for aluminum alloys of 12,000 angstroms/minute. The substrate pallet can be in excess of 200 angstroms/kw minute with sputtered material utilization approaching.

Uniformity and throughput

Delta cathode systems maximize uniformity of deposition, exhibiting a +/-7% uniformity over a 6″ annular width. Optional high performance Delta cathodes yield a uniformity of +/-5% over a 7³/₄ inch band, allowing processing of up to 22 100mm wafers per cycle. Standard Delta cathodes process 50-60 100mm wafers per hour while optional high performance Delta cathodes yield throughput in excess of 80 100mm wafers per hour.

A particular advantage of a circular batch sputtering system is its adaptability to different substrate sizes. The Model 4410 and other delta cathode systems can easily handle substrate size up to 8 inches in diameter. Standard wafer size of 3 inch, 100mm, 125mm and 150mm can easily be accommodated.

Resistivity

Perkin Elmer sputtering systems ensure low film resistivity by minimizing partial pressure of oxygen and nitrogen below 1X10^-7 Torr. With total system background pressure of 5X10^-7 Torr and an instantaneous deposition rate in excess of 8500 angstroms/minute, near-bulk resistivity for aluminum alloy films can be achieved.

Film Hardness

By keeping oxygen content below, film hardness for typical 1 micron thick aluminum silicon films can be kept below 100 kg/mm² after annealing at 500^oC, minimizing bonding failures.

Specularity

High quality aluminum alloy films of 70-90% relative reflectance are routinely produced in high rate DC Delta magnetron systems, yielding wafers easily accommodated in today’s projection mask aligners.

Optional load lock pumping and wafer degassing further minimize water vapor and hydrogen, the principal contaminants that contribute to hillock growth and poor specularity. As metallization films become thicker and specularity degrades, further reduction of unwanted gases can be achieved through the use of supplemental hydrogen getter pumping in the Model 4410 and other Delta cathode systems.

Step Coverage

The high rate sputtering made possible with Perkin Elmer Delta DC magnetron cathodes produces sufficient heat to maintain film temperature in the ideal range. Heating the substrate in this manner and re-sputtering the deposited material through RF bias improves coverage of vertical surfaces in VLSI structures. It also minimizes cracks and cusping.

Optional High Performance Delta Cathodes

Provide more uniform deposition over a wider annular region of the pallet. A maximum of twenty two 100mm wafers can be loaded yielding 50% more throughput for a typical metallization process. The HIGH THROUGHPUT option consists of a modified shaping aperture, a high performance Delta cathode and a pallet nested for twenty two 100mm wafers. The region of high uniformity is extended across the total 8″ annular width of the pallet. A uniformity of +/-7% is achieved across a  7³/₄ inch band suitable for mounting two concentric rows of 100mm wafers. This wide brand of uniformity means that 5¹/₄“, 8″, or 14” recording discs can be accommodated in the system.

The Delta Cathode Dual Deposit Sputter Module

The Delta Cathode Dual Deposition Sputter Module, operable in either a dual DC mode or DC and RF mode, is designed for higher throughput and larger scale production. Separate power suppliers allow independent application of either DC or RF energy to two delta cathodes simultaneously. The dual deposit sputter module for Models 4410, 4450 and 4480 is the choice for co-sputtering of refractory metal silicides  for VLSI circuits. The dual deposit sputter modules and the co-sputtering technique allow the deposition of contamination-free films.

Features:

• High rate Delta DC magnetron
• High throughput operation
• Fully process characterized for aluminum alloys
• High uniformity
• DC, RF, Etch, and Bias operation
• Ultra clean vacuum system
• Load lock operation
• UHV design
• Flexible for development or production use
• Any size substrates up to 8″ diameter
• Various pumping and power options
• Optional system and process controllers
• Cassette to cassette operation(Model 4480)
• Co-sputter option for silicides
• Operation gas controller

Delta^TM Cathode Production Sputtering System

OEM:  Perkin-Elmer  Ultek Division

Perkin-Elmer’s Model 4410 delta cathode production sputtering system is designed for high yield in production environments demanding maximum throughput for metal deposition. It also provide a high level of flexibility in process control for other materials.

The 4410 uses a delta-shaped cathode that eliminate the need for a large-area uniformity-shaping aperture. This dramatically increases throughput while maintaining high wafer-to-wafer uniformity.

Contrasted with circular cathodes, target utilization is substantially higher. Up to 35% of the target can be sputtered before target change, and some 60% of the sputtered material actually reaches the substrate pallet. This results in a lower cost per wafer and less frequent target changes. Up to three delta or 8-inch round targets may be installed for sequential deposition of three different materials without breaking vacuum.

The 4410 employs a fast cycle load lock, two-stage cryopump and full flood Meissner trap to maintain the process chamber at high vacuum and in a clean condition at all times. The process chamber is fabricated of stainless steel for contamination-free performance. A base pressure better than 5 X 10^-7 Torr is achieved within 3.5 minutes from loading substrates into the load lock. Typical cycle time, with optional load lock heating and pumping, is 12 to 15 minutes for the deposition of 1 micron of aluminum.

System Highlights

• High rate delta DC magnetron sputtering: Aluminum and aluminum alloys can be sputter deposited at rates in excess of 1800 Å /min, with loads of thirty 3-inch or thirteen 4-inch wafers.
• High throughput operation: Automated load lock and controller sequences provide for efficient pump-down and pallet transfer to process chamber, maximizing throughput.
• High uniformity: +/-7% deposition uniformity guaranteed with water-cooled rotating annular substrate table;+/-5% achievable.
• The right sputter mode for each application: Sputter deposit, 0-10% RF bias sputter. DC bias sputter, sputter etch to 2 kw, RF magnetron, RF diode, DC delta magnetron.
• Ultra-clean vacuum: Cryopump and Meissner-trapped process chamber ensures contamination-free conditions especially important for critical processes such as the deposition of aluminum and platinum.
• Designed for operator safety: Two-button operation initiates pump-down and load sequence. Safety interlocks on DC and RF suppliers.
• Easy maintenance: Removable deposition shields permits easy system cleaning. Automatic cryopump regeneration minimized downtime and inconvenience.
• Key function clearly displayed: Valve position and system status are continuously displayed by quick-reading LEDs on front panels.
• Easy wafer loading: Tweezer grooves facilitate wafer loading. Nested pallets are optional.
• A fail-safe system: Water flow switches on cathodes, matching network and vacuum system automatically shut the system down in case of cooling system failure.

MODEL Perkin-Elmer 4410 Sputter SPECIFICATIONS

Typical Process Results

High quality metal films can be routinely achieved:

Material:Al-1%Si

Power:9kw

Table rotation:10 rpm

Argon pressure:8 mTorr

Film thickness:1.04 microns

Deposition time:5.8 minutes

Step height: 1.10 microns

Step slope: 80^o

Step coverage: 62% horizontal-to-vertical

Specularity: 65-75%

Resistivity: 2.85μΩ-cm

Grain size:2 microns

Process Chamber

• 28″ diameter X 12″ high stainless steel cylinder with 6″ CF flange viewport and load lock port
• 28″ diameter stainless steel top plate with 3 delta cathode ports
• 28″ diameter stainless steel base plate
• 1¹/₂” air-operated roughing isolation valve
• Solenoid-operated gas inlet valve
• ³/₈” solenoid-operated vent valve
• 1¹/₂” blanked-off leak check port
• Removable deposition shields
• 23″ diameter, 3-position water-cooled annular substrate table with adjustable 1-10 rpm SCR motorized table drive
• Full circle shutter with vane shutter
• Chain drive pallet carrier transport
• Automatic plasma igniter
• Heavy duty electric hoist 

Load Lock 

• 30″ x 28″ x 8″ stainless steel load lock chamber with aluminum cover
• 2″ air-operated roughing isolation valve
• ³/₈” solenoid-operated vent valve
• 23″ diameter molybdenum annular substrate pallet
• Pallet carrier and chain drive transport

Vacuum System

Roughing

• 36.7 cfm mechanical pump for process chamber and load lock roughing
• 2″ diameter roughing lines with electropneumatic valve
• Surface-area Versa-trap^TM  in roughing line

High vacuum pumping

• 2 stage cryopump with 1000 l/s pumping speed for air, including chevron, water-cooled compressor and lines, automatic regeneration controller and plumbing kit.
• 7¹/₂” O.D. (6″ ASA) aluminum air-operated gate valve
• Air-operated venetian blind throttling valve

Residual gas pumping

• Full flood Meissner trap with 30,000 l/s pumping speed for water vapor
• Insylated LN₂ lines
• LN₂ sensor, solenoid and relief valve

Control

• Vacuum gauging package including basic digital vacuum gauge control (DGC II), ionization tube and two thermister tubes
• Automatic pump-down controller
• Automatic lock controller

Options

• Diffusion-pump system including 1500 l/s oil diffusion pump, LN² chevron baffle, water-cooled baffle and water-flow switch.
• Turbomolecular-pumped system including 450 l/s turbo pump, foreline manifold with 1¹/₂” air-operated isolation valve, and water-flow switch(less throttling valve)
• Polycold-compatible quick-purge Meissner trap. 

Sputtering Control Module

• 3 kw water-cooled RF matching network
• RF power on/off switch
• RF power level control
• 4 position rotary sputter mode selector
• 3 position rotary target selector
• 2 position shutter position switch
• Manual load and tune controls
• 15-turn vernier 0-10% bias control
• Forward and reflected RF power meters
• Substrate bias meter
• Target bias meter
• Target-to-table spacing meter
• Servo-Match^TM automatic turning (mounted in lower console) 

Cathode Options

• Delta DC magnetron cathode assembly with water-cooled backing plate and anode
• Delta-to-8-inch round cathode adaptor
• 8″ diameter RF magnetron cathode assembly
• 8″ diameter RF diode assembly
• 8″ diameter DC magnetron cathode assembly
• Delta blank-off plate
• Magnabond^TM 8-inch round target kit for DC cathodes
• Bolt-on Delta target kit 

Power Options

• 2 kw RF Generator
• 3 kw RF Generator
• 5 kw programmable DC magnetron power supply including digital clock timer
• 10 kw programmable DC magnetron power supply including digital clock timer 

Utilities

• Rear-mounted electrical, water, gas and LN₂ inlet panel
• Power distribution box
• Water-flow switch panel and manifold 

System Options

• Precision 3 rpm to 5 rpm servo-driven table drive
• Water-cooled process chamber
• Water-cooled top plate
• Dura gas inlet system
• Wide range digital vacuum gauge control
• Continuous viewing vacuum port 

Accessories

• Load lock pumping and heating system including 100 l/s turbomolecular pump, 17.7 cfm mechanical pump, 200^oC heater and controller
• Microprocessor for machine and process control
• Programmable RF power stabilizer
• DC sputter with RF bias
• Process chamber 350^oC heater (mounted in cathode position)
• Digital clock timers
• Annular pallet nested for 64 2-inch,30 3-inch or 13 4-inch wafers
• Polycold refrigeration system for Meissner trap
• Delta target copper backing plate
• Pressure or flow controllers

Microprocessor Operation Option

Ultek’s microprocessor controller option permits automated control of machine functions and process parameters including load lock operation, pump-down venting and all process sequences. Up to five 16-step process sequences can be stored in the system’s memory to facilitate process change.

An interactive CRT facilitates programming. Unconditional looping is available for repetitive processes. Other capabilities include: program listing, hard copy records and interface with other computer systems.