Perkin-Elmer 4400

The Circular Cathode Systems-Model 4400

Perkin-Elmer 4400  is designed for use in production environments or process development. Up to three 8-inch circular cathodes and a 350^oC quartz lamp heater may be installed in the process chamber to accommodate a variety of processes. An optional RF power sputtering network enables the RF/RF Co-deposition of two different materials. Precise stoichiometries of graded interface may be easily achieved.

The Model Perkin-Elmer 4400 is routinely used for such processes as the deposition of Cr-Co for recording discs, Cr-Cu for backside metallization, TaSi₂ for gate metallization and Si₃N₄ for interlayer dielectric.

Chrome-Cobalt

A precise ratio of chrome to cobalt is readily achieved with co-deposition using the RF power splitting option, ideal film temperature in the range 170 ^oC-200 ^oC can be easily obtained for optimum grain growth and orientation.

Chrome-Gold

The films resulting from the sputter deposition of chrome-gold are superior to those obtained from evaporation processes, pre-etching prior to deposition removes native oxide improving film adhesion and RF magnetron deposition results in lower thin film temperature and less gold interdiffusion.

Tantalum Silicide

Tantalum silicide of any desired stoichiometry is easily deposited with co-sputtering using the RF power splitting module. Annealed film resistivity of approximately 2.3 ohms per square can be obtained from a typical 2000 angstrom film of tantalum silicide. Within further advances in process technology, the UHV design of the 4400 will enable it to accommodate the deposition of refractory metal silicide films of even higher resistivities.

Silicon Nitride

With RF bias deposition, silicon nitride films exhibiting low pin-whole count, good step coverage and low stress can be readily deposited in the model PE 4400.

The RF Power Split Module

The two-way adjustable RF Power Split Module provides precise control of the level and ratio of RF energy from a single RF generator to two 8″ diameter cathodes simultaneously. A total of 2 kw may be applied with power ratio adjustable between 5% and 95%. This module is idea for use with the Model 4400 and 2400-8SA in R&D and in low volume production applications, where precise control of alloying of film properties is desired.

Features

• Efficient 8″ round cathodes
• High throughput operation
• High Uniformity
• DC, RF Etch and Bias operation
• Ultra Clean vacuum system
• Load lock operation
• UHV design
• Flexible for development or production use
• Substrates up to 6″ diameter
• Various pumping and power options
• RF/RF co-sputtering option
• Optional gas controllers

A Wide Range of Process

The following processes have been demonstrated in the Model Perkin-Elmer  4400 Sputter Deposition Systems.