As new commercial and industrial technologies emerged and grew, so did the use of sputtering as a technique for deposition thin films of desired characteristics. The Perkin Elmer 4400 and Perkin-Elmer 2400 Series sputtering systems were designed to meet the changes of this changing technical environment, whether in development or production.

With an installed base of more than thousands of systems, Perkin-Elmer was a leading supplier of sputter deposition equipment for high technology application in 1990’s. The Perkin Elmer Series sputtering systems were used not only in the production of semiconductor devices but also in the development and manufacturing of thin film recording heads, thin film resistors and capacitors, optical coatings, gallium arsenide lasers and fiber optics.

Quality, performance and stability backed by more than two decades of experience in vacuum technology and UHV design were built into every Perkin Elmer sputtering system. The 4400 Series were designed for flexibility offering a wide range of operating and process modes. The highest quality construction and components assure reliable operation and an ultra clean vacuum environment to yield consistently reproducible results. Every Perkin Elmer sputtering system was supported by years of technological experience and backed by a worldwide sales and service organization dedicated to prompt courteous service.

Versatile Systems For Any Sputtering Need

The Perkin-Elmer 4400 Series, designed specially for high throughput production environments, features a high capacity load lock and a broad range of operating models to accommodate virtually any thin film coating requirement.

High Throughput

The Perkin-Elmer 4400 Series fast cycle load lock, cryogenic pump, and full flood Meissner trap ensures quick turnaround on batch loads. High throughput are achieved for a full range of substrate sizes and shapes.

High Yield

A rotating substrate table for multi-pass deposition helps assure high uniformity and run-to-run repeatability. Simplicity of mechanical design with a minimum number of moving parts in the process chamber minimizes the generation of defect-causing. Easy loading pallet designs reduce wafer breakage. Consistently clean vacuum conditions assure reproducible high quality films.

Optimum Process Control

The Perkin-Elmer 4400 Series provides a broad choice of target materials, machine operating models, pressure and gas controls, cathode configurations and power levels. Operating models include DC magnetron, RF magnetron, RF diode, bias sputter, reactive sputter, co-sputter and RF etch.

Total Control of Critical Film Characteristics

The Perkin-Elmer 4400 Series systems yield excellent films for a wide variety of materials including aluminum alloys, platinum silicide, titanium-tungsten, nichrome-gold, silicon nitride, silicon dioxide, precious metals and permalloy.

Deposition Of Thin Film for VLSI Geometries

4400 Series System configurations

No single cathode design can effectively meet the varied needs of different users or even the possible multiple needs of one user. Every film requires an optimum combination of target material, size, and shape for its most efficient fabrication. Recognizing these realities, the Perkin-Elmer 4400 Series provides two distinct cathode configurations: 8″ circular and delta-shaped.

Perkin-Elmer 4400

A general purpose sputtering system employing up to three 8″ diameter circular cathodes in DC magnetron, RF magnetron, or RF diode configurations. Power options are available up to 2 kw RF and 5 kw DC.

Perkin-Elmer 4410

A delta target sputtering system designed for high rate deposition of metals and metal alloys. The 4410 is also adaptable to the deposition of dielectrics and employs up to three delta-shaped cathodes in DC magnetron, RF magnetron, or RF diode configuration. Power options are available up to 3 kw RF and 10 KW DC.

Perkin-Elmer 4450

A delta target sputtering system, similar to the Model 4410 with load lock pumping and heating incorporated as standard features.

Perkin-Elmer 4480

A delta target sputtering system of identical design to Model 4450 but including cassette-to-cassette loading as a standard feature.  

Series Perkin-Elmer 4400/2400-Options

Sputtering is a momentum transfer process in which atoms from a cathode/target are driven off (or sputtering) by bombarding ions. In this process the momentum of the bombarding particles is more important than the energy. For example , a hydrogen or helium ion accelerated to 3,000 eV will cause very little sputtering compared to an ion of argon (which is chemically inert) with the same 3,000 eV energy, simply because the much higher hydrogen or helium ion has much less momentum.

Sputtered atoms travel until they strike a substrate , where they are deposited to form the desired thin film. As individual atoms, they can be chemically active and form compounds with the ions and atoms of the bombarding gas. For this reason, inert argon typically is used as the bombarding gas. In some applications, however, a reactive gas is intentionally added to the argon to alter the chemical composition of the deposited film (e.g., nitrogen gas in combination with tantalum sputtering to form tantalum nitride, TaN).

When argon atoms strike the target, their electrical charge is neutralized and they return to the process as atoms. If the target is an insulator, the neutralization process results in a positive charge on the target surface. The charge may grow so large that the bombarding ions are repelled and the sputtering process stopped. To allow the process to continue, polarity of the target must be reversed, attracting enough electrons from the discharge to eliminate the surface charge. This periodic reversal of polarity is accomplished automatically by applying RF voltage to the target assembly ( hence the term “RF” sputtering).

Of interest here is the diode rectifier-like behavior of the target and discharge systems. This results from the vast difference in mobility of ions and electrons. Electrons , being so much fast, are attracted in greater numbers to the target during the positive half-period of the RF voltage than are ions during the negative half-period. Thus, the target develops a negative DC bias.

Perkin-Elmer Sputtering Systems perform a number of sputtering process, each of which is ideal for a different application.

RF Diode Sputter Deposition

When the vacuum set point is reached, sputtering gas (typically argon) is introduced in the process chamber at a pre-selected rate (typically 40 sccm). A plasma, or self-sustaining glow charge , initiated by an automatic plasma igniter, appears when RF power is applied between the target and electrical ground, ionizing the argon gas.

A negative (-) potential applied to the target, as a result of the applied RF power, attracts the ionized argon at a momentum determined by a) the magnitude of applied potential and b) the mass of the ion. The momentum of the incoming ion is transferred to the target material, causing surface atoms or molecules of target material to be ejected (sputtered). These sputtered atoms travel across the gap separating the target (cathode) and substrate table (anode), and are deposited on the substrate (wafers) which are arranged on the substrate pallet.

RF Magnetron Sputter Deposition

RF magnetron and RF diode sputtering are very similar, except that during RF magnetron sputtering a magnetic field deflects the secondary electrons (which are produced during normal sputtering operation) away from the substrates. The sputtering process, which is cooler than RF diode sputtering, permits materials to be sputter deposited on substrate at lower temperatures and greatly reduces the chance of radiation damage to delicate substrates.

Because the impedence  of a magnetron is lower, higher power densities are possible at lower potentials, effecting high sputter rates.

DC Magnetron Sputter Deposition

DC magnetron targets enhance the plasma density and increase the sputtering rate, by trapping electrons in an electromagnetic “envelope”. This “envelope” is formed when lines of the magnetic field enter and exit the target face and when the loci of maximum transverse magnetic fields form a closed figure. Because the currents involved are very large, a separate, positively-biased anode (a dark space shield) is used to collect the electrons. A similar dark space shield is used in RF diode and RF magnetron deposition, This dark space shield prevents the sides of the target and target backing plate from sputtering.

RF Sputtering-Etching

Essentially the reverse process of RF diode sputter deposition, in which the substrate table becomes the cathode (negative pole) and the target assembly becomes the anode (positive pole). Under these circumstances, surface material from the substrates is ejected. Surface impurities are ejected along with substrates material, making this process useful for pre-cleaning substrate prior to sputter deposition. In order to prevent ejected material from contaminating the target, s shutter is positioned between target and substrate.

Bias Sputter Deposition

Bias sputtering combines the DC or RF sputtering and the RF etching operations. While DC or RF power is applied to the target, a small amount of RF is also applied to the substrate table. As a result, the substrate and target are both bombarded by ions ( the substrate to a lesser extent than the target ). In many applications this process yields superior quality films than can be attained using DC or RF sputtering with grounded substrates. Bias sputtering influences the crystal structure, and tends to re-sputter trapped argon from the growing film during deposition and rearrange individual atoms of the sputtered material; this improves stoichiometry and step coverage. Bias sputtering can be used to adjust film resistivity and film stress to desired levels.

Reactive Sputtering

Some metals, such as nitrides and oxides, are best deposited by this method: the target is the parent metal and a small amount of nitrogen or oxygen is introduced into the process chamber along with the argon sputtering gas. Because ionized gases are typically highly reactive, a film deposited in a mixture of argon and a reactive gas will often form a compound with the reactive gas (e.g., a nitride or an oxide).

Co-Deposition

Sometimes called co-sputtering or dual deposition, co-deposition is identical in principle and practice to other types of sputter deposition, except that two targets (typically of different materials) are simultaneously activated. Substrates passing sequentially and repeatedly beneath the targets are coated with alternating, very thin films of two materials. Under certain circumstances, the resultant film can be equivalent to or better than one formed using a composite target. During co-deposition, both targets may be RF, both DC, or one RF and one DC.